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Si + Si3N4 Wafer

Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 145 nm LPCVD Si3N4 on both sides !! few particles or defects underneath the nitride film visisble using a wafer inspection lamp !!

Si + Si3N4 Wafer
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Staffelpreise:

Menge: Stückpreis:
bis 4 48,00 € *
ab 5 39,00 € *
ab 10 33,00 € *
ab 25 27,00 € *
ab 50 25,00 € *

zzgl. MwSt. zzgl. Versandkosten

Spezifikationen:

Artikel-Nr.: WNA40525255B1314S152
Coating thickness: 150
Material: Si + Si3N4
Wafer thickness: 525 µm
Surface: 2-side polished (dsp)
Quality: Prime
Orientation: (100)
Resistivity: 1 - 10 Ohm cm
Dopand: Boron
Wafer thickness tolerance: +/- 25 µm
Diameter: 4 inch (100 mm)
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron)... mehr

Produktinformationen "Si + Si3N4 Wafer"

Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 145 nm LPCVD Si3N4 on both sides !! few particles or defects underneath the nitride film visisble using a wafer inspection lamp !!

Min. order quantity = 1 wafer. From 25 wafers on, only sales units of 25 wafers. One sales unit of 10 wafers is also available on stock.

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