Silicon Wafer

Prime CZ-Si wafer 4 inch (100 +/- 0.2 mm), thickness = 300 ± 10 µm, (100), 2-side polished, p-type (Boron), TTV < 10 µm, 0.001 - 0.02 Ohm cm, Bow/Warp < 30 µm, <100> +/- 0.2°, Edge contour: rounded; Laser marking SEMI M13 code: ´100-Pabcd-XXX´Primary flat SEMI Std. (32.5+/-2.5mm) {110} +/- 0.3°; Secondary flat SEMI (90°cw to primary Flat)

Silicon Wafer

Staffelpreise:

Menge: Stückpreis:
bis 24 33,40 € *
ab 25 14,00 € *

zzgl. MwSt. zzgl. Versandkosten

LAGERBESTAND: 24
PRODUZIERBAR2: mehr auf Anfrage.

2 Der Artikel kann auf Anfrage produziert werden. Bitte kontaktieren Sie uns.

Spezifikationen:

Artikel-Nr.: WSA40300100B1021SNN1
Surface: 2-side polished (dsp)
Wafer thickness: 300 µm
Wafer thickness tolerance: +/- 10 µm
Quality: Prime
Orientation: (100)
Dopand: Boron
Diameter: 4 inch (100 mm)
Material: CZ-Si
Resistivity: 0,001 - 0,02 Ohm cm
Prime CZ-Si wafer 4 inch (100 +/- 0.2 mm), thickness = 300 ± 10... mehr

Produktinformationen "Silicon Wafer"

Prime CZ-Si wafer 4 inch (100 +/- 0.2 mm), thickness = 300 ± 10 µm, (100), 2-side polished, p-type (Boron), TTV < 10 µm, 0.001 - 0.02 Ohm cm, Bow/Warp < 30 µm, <100> +/- 0.2°, Edge contour: rounded, Laser marking SEMI M13 code: '100-Pabcd-XXX'Primary flat SEMI Std. (32.5+/-2.5mm) {110} +/- 0.3°, Secondary flat SEMI (90°cw to primary Flat)

Min. order quantity = 1 wafer. From 25 wafers on, only sales units of 25 wafers. One sales unit of 24 wafers is also available on stock.

Weiterführende Links zu "Silicon Wafer"

Zuletzt angesehen