Si + SiO2 Wafer

Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 500 nm SiO2

Si + SiO2 Wafer

Staffelpreise:

Menge: Stückpreis:
bis 1 42,00 € *
ab 5 31,20 € *
ab 10 25,60 € *
ab 25 20,00 € *
ab 50 18,00 € *
ab 100 17,00 € *

zzgl. MwSt. zzgl. Versandkosten

LAGERBESTAND: 329

Spezifikationen:

Artikel-Nr.: WWD40525250B1314S501
Material: Si + wet SiO2
Coating thickness: 500
Wafer thickness: 525 µm
Quality: Prime
Orientation: (100)
Resistivity: 1 - 10 Ohm cm
Dopand: Boron
Wafer thickness tolerance: +/- 25 µm
Surface: 1-side polished (ssp)
Diameter: 4 inch (100 mm)
Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm,... mehr

Produktinformationen "Si + SiO2 Wafer"

Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron) TTV < 10 µm, 1 - 10 Ohm cm, 500 nm SiO2

Min. order quantity = 1 wafer. From 25 wafers on, only sales units of 25 wafers. One sales unit of 4 wafers is also available on stock.

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