Si + Si3N4 Wafer

Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 45 nm low-stress LPCVD Si3N4 on both wafer sides, ihomogenous appearance (large-scale spots visible, maybe impurities underneath nitride coating)

16,00 € *

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LAGERBESTAND: 25
PRODUZIERBAR2: mehr auf Anfrage.

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Spezifikationen:

Artikel-Nr.: WNS40525155B1314S041
Surface: 2-side polished (dsp)
Material: Si + Si3N4
Wafer thickness tolerance: +/- 15 µm
Wafer thickness: 525 µm
Quality: Dummy
Orientation: (100)
Resistivity: 1 - 10 Ohm cm
Dopand: Boron
Diameter: 4 inch (100 mm)
Coating thickness: 40
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100),... mehr

Produktinformationen "Si + Si3N4 Wafer"

Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 15 µm, (100), 2-side polished, p-type (Boron) TTV < 5 µm, 1 - 10 Ohm cm, 45 nm low-stress LPCVD Si3N4 on both wafer sides, ihomogenous appearance (large-scale spots visible, maybe impurities underneath nitride coating)

Min. order quantity and sales unit = 25 wafers.

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