Si + Si3N4 Wafer
Prime Si + dry/wet/dry SiO2 wafer 4 inch, thickness = 525 ± 25 µm, (100), 1-side polished, p-type (Boron), 1 - 10 Ohm cm, 500 nm SiO2 + 60 nm (best effort) stoichiometric high-stress LPCVD Si3N4 on both sides
Dieser Artikel steht derzeit nicht zur Verfügung!
Spezifikationen:
| Artikel-Nr.: | WND40525250B1314S061 |
| Material: | Si + Si3N4 |
| Wafer thickness: | 525 µm |
| Quality: | Prime |
| Orientation: | (100) |
| Resistivity: | 1 - 10 Ohm cm |
| Dopand: | Boron |
| Wafer thickness tolerance: | +/- 25 µm |
| Surface: | 1-side polished (ssp) |
| Diameter: | 4 inch (100 mm) |
| Coating thickness: | 60 |
Zuletzt angesehen