Si + Si3N4 Wafer

Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 40 nm low-stress Si3N4

Si + Si3N4 Wafer
58,00 € *

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LAGERBESTAND: 14
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Spezifikationen:

Artikel-Nr.: WNA40525255B1314S041
Material: Si + Si3N4
Wafer thickness: 525 µm
Surface: 2-side polished (dsp)
Quality: Prime
Orientation: (100)
Resistivity: 1 - 10 Ohm cm
Dopand: Boron
Wafer thickness tolerance: +/- 25 µm
Diameter: 4 inch (100 mm)
Coating thickness: 40
Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100),... mehr

Produktinformationen "Si + Si3N4 Wafer"

Prime Si + Si3N4 wafer 4 inch, thickness = 525 ± 25 µm, (100), 2-side polished, p-type (Boron), TTV < 5 µm, 1 - 10 Ohm cm, 40 nm low-stress Si3N4

Min. order quantity = 1 wafer. From 25 wafers on, only sales units of 25 wafers. One sales unit of 14 wafers is also available on stock.

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